STPS10SM80C STMicroelectronics, STPS10SM80C Datasheet - Page 3

• Manufacturer Part Number: STPS10SM80C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS10SM80C

• Insulated Voltage: 2000 V
• Package Capacitance: 45 pF

Table 4.
1. Pulse test: t
2. Pulse test: t
Figure 2.
Figure 4.
0.001
Symbol
0.01
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
V
I
1
0.01
R
0
F
P
(1)
(2)
P
F(AV)
P
ARM
ARM
(W)
(1µs)
(t p )
1
Reverse leakage current
Forward voltage drop
p
p
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation:
P = 0.50 x I
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
δ = 0.05
2
Parameter
1
3
δ = 0.1
F(AV)
+ 0.023 x I
δ = 0.2
δ = t / T
4
10
p
T
T
T
T
T
T
T
T
T
5
t
j
j
j
j
j
j
j
j
δ = 0.5
p
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
F
100
2
(RMS)
Doc ID 018721 Rev 1
Test conditions
6
I
δ = 1
F(AV)
t (µs)
p
(A)
1000
7
V
I
I
I
F
F
F
R
Figure 3.
Figure 5.
1.2
0.8
0.6
0.4
0.2
= 2.5 A
= 5 A
= 10 A
= V
1
0
6
5
4
3
2
1
0
25
P
0
I
ARM
F(AV)
P
RRM
ARM
(25 °C)
(A)
(T )
j
25
50
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
Min.
50
-
-
-
-
-
-
-
-
TO-220AB / I PAK / D PAK
75
75
T
0.560
0.485
0.685
0.575
0.815
0.660
Typ.
TO-220FPAB
amb
3.2
2.8
(°C)
2
100
100
R th(j-a) = R th(j-c)
2
0.610
0.520
0.745
0.615
0.880
0.730
125
Max.
15
8
125
150
Unit
mA
µA
T (°C)
V
j
175
3/11
150