STPS10L40C STMicroelectronics, STPS10L40C Datasheet - Page 4

• Manufacturer Part Number: STPS10L40C
• Description: Low Drop Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS10L40C

• Insulated Package: TO-220FPAB

Characteristics
4/9
Figure 7.
Figure 9.
Figure 11. Forward voltage drop versus
1.0
0.8
0.6
0.4
0.2
0.0
1E+2
1E+0
100.0
1E+1
1E-2
1E-3
1E-1
10.0
1E-3
1.0
0.1
0.0
Z
0
I (mA)
th(j-c)
R
δ = 0.5
Single pulse
δ = 0.2
δ = 0.1
I
FM
T =125°C
(A)
j
0.2
/R
5
th(j-c)
(typical values)
T =150°C
Relative variation of thermal
impedance junction to case versus
pulse duration
(TO-220AB and D
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
forward current (maximum values,
per diode)
j
0.4
10
1E-2
0.6
15
T =25°C
j
0.8
t (s)
p
V
V (V)
T =150°C
T =100°C
T =25°C
FM
j
j
j
20
R
(V)
1.0
2
25
PAK)
1E-1
1.2
δ
30
=tp/T
1.4
T
35
1.6
tp
1E+0
1.8
40
Figure 8.
Figure 10. Junction capacitance versus
Figure 12. Thermal resistance junction to
1.0
0.8
0.6
0.4
0.2
0.0
1000
80
70
60
50
40
30
20
10
100
0
1E-3
10
0
R
1
Z
C(pF)
th(j-a)
th(j-c)
δ = 0.5
δ = 0.2
Single pulse
δ = 0.1
4
(°C/W)
/R
th(j-c)
2
8
Relative variation of thermal
impedance junction to case versus
pulse duration
(TO-220FPAB)
reverse voltage applied (typical
values, per diode)
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm) ( D
1E-2
12
16
S(Cu)(cm²)
5
2
t (s)
p
1E-1
PAK)
20
V (V)
R
10
24
28
1E+0
δ
STPS10L40C
20
=tp/T
32
V
OSC
T
F=1MHz
T =25°C
=30mV
j
36
tp
RMS
1E+1
50
40