STPS10L40C STMicroelectronics, STPS10L40C Datasheet - Page 2

• Manufacturer Part Number: STPS10L40C
• Description: Low Drop Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS10L40C

• Insulated Package: TO-220FPAB

Characteristics
1
2/9
Characteristics
Table 1.
1.
Table 2.
When the diodes 1 and 2 are used simultaneously :
Δ
Table 3.
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.33 x I
Symbol
Symbol
Tj(diode 1) = P(diode1) x R
Symbol
R
R
R
R
I
V
F(RMS)
I
V
I
P
dV/dt
I
I
I
th(j-c)
th(j-c)
R
F(AV)
dPtot
---------------
th (c)
T
th (c
RRM
RSM
F
FSM
RRM
ARM
dTj
(1)
T
(1)
stg
j
)
<
------------------------- -
Rth j a
Reverse leakage current
Forward voltage drop
Junction to case
Junction to case
Repetitive peak reverse voltage
RMS forward voltage
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
F(AV)
(
Average forward
1
Absolute ratings (limiting values)
Thermal resistances
Static electrical characteristics (per diode)
–
)
condition to avoid thermal runaway for a diode on its own heatsink
current
+ 0.026 I
Parameter
F
2
(RMS)
TO-220AB
D
TO-220FPAB
th(j-c)
2
PAK
(Per diode) + P(diode 2) x R
Parameter
TO-220AB / D
TO-220FPAB
Parameter
T
T
T
T
T
T
j
j
j
j
j
j
= 25° C
= 100° C
= 25° C
= 100° C
= 25° C
= 125° C
Test Conditions
Tc =135° C
δ = 0.5
T
δ = 0.5
t
t
t
t
p
p
p
p
c
2
= 2 µs square F = 1 kHz
= 10 ms sinusoidal
= 100 µs square
= 1 µs Tj = 25°C
PAK
(1)
= 140° C
V
I
I
I
I
F
F
F
F
R
= 5 A
= 5 A
= 10 A
= 10 A
= V
RRM
Per diode
Per diode
Coupling
Coupling
Per diode
Per device
Per diode
Per device
Total
Total
th(c)
Min.
.
-65 to + 150
Typ.
0.36
0.49
8
Value
0.35
10000
Value
1.7
3.8
2.5
2700
150
150
3
5
40
20
10
10
5
5
1
2
STPS10L40C
Max.
0.53
0.46
0.67
0.59
0.2
25
°C/W
°C/W
Unit
Unit
V/µs
Unit
° C
° C
mA
mA
W
V
A
A
A
A
A
A
V