STPS61150C STMicroelectronics, STPS61150C Datasheet - Page 2

• Manufacturer Part Number: STPS61150C
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS61150CW
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test : * tp = 380 s, < 2%
To evaluate the conduction losses use the following equation :
P = 0.54 x I F(AV) + 0.0043 I F
Fig. 1: Conduction losses versus average current
(per diode).
30
25
20
15
10
Fig. 3: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
2/4
When the diodes 1 and 2 are used simultaneously :
5
0
Symbol
Symbol
1
0
R
R
Tj(diode 1) = P(diode1) x R
0
P
25
V
P
th(j-c)
th(j-c)
F(AV)
I
R
P
ARM
F
ARM p
*
*
(W)
(25°C)
5
(t )
Junction to case
Junction to case
50
Reverse leakage
current
Forward voltage drop
10
= 0.05
Parameter
15
75
= 0.1
2
(RMS)
I
F(AV)
T (°C)
j
20
(A)
= 0.2
th(j-c)
100
25
(Per diode) + P(diode 2) x R
= 0.5
Tj = 25°C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Tj = 25 C
Tj = 125°C
Parameter
30
125
=tp/T
35
= 1
T
Tests Conditions
tp
150
40
V
I
I
I
I
Fig. 2: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 4: Average forward current versus ambient
temperature ( =0.5, per diode).
35
30
25
20
15
10
F
F
F
F
0.01
5
0
R
0.1
0
= 30 A
= 30 A
= 60 A
= 60 A
1
I
0.01
F(AV)
= V
P
P
ARM
ARM p
RRM
(A)
=tp/T
Per diode
Coupling
th(c)
(1µs)
25
(t )
Total
T
0.1
tp
50
Min.
R
1
R
75
th(j-a)
th(j-a)
T
t (µs)
p
=15°C/W
amb
=R
th(j-c)
Typ.
0.63
0.76
Value
(°C)
7
7
100
0.9
0.6
0.3
10
Max.
0.84
0.67
0.92
125
0.8
20
25
100
150
°C/W
°C/W
Unit
Unit
mA
µA
V
1000
175