STPS61150C STMicroelectronics, STPS61150C Datasheet
STPS61150C
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STPS61150C Summary of contents
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... Rth October 2003 - Ed 150 V 175°C 0.67 V Parameter Tc = 150° Sinusoidal tp = 1µ 25°C STPS61150CW TO-247 Value Unit 150 80 30 Per diode 60 Per device ...
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... STPS61150CW THERMAL RESISTANCES Symbol R Junction to case th(j-c) R th(j-c) Junction to case When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current V * Forward voltage drop F Pulse test : * tp = 380 s, < evaluate the conduction losses use the following equation : ...
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... T =75°C = 0.2 c 0.3 = 0.1 T =125°C c 0.2 Single pulse 0.1 0.0 1.E-03 1.E-01 1.E+00 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 10000 1000 100 110 130 150 1 T =25°C j (maximum values) 0.8 0.9 1.0 1.1 1.2 STPS61150CW /R th(j-c) t (s) p 1.E-02 1.E- 100 T tp =tp/T 1.E+00 F=1MHz V =30mV OSC RMS T =25°C j 1000 3/4 ...
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... Ordering type Marking STPS61150CW STPS61150CW Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...