BF908WR NXP Semiconductors, BF908WR Datasheet - Page 5

• Manufacturer Part Number: BF908WR
• Description: Depletion type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
1995 Apr 25
handbook, halfpage
N-channel dual-gate MOS-FET
V
T
V
T
DS
j
DS
j
Fig.5
= 25 C.
= 25 C.
(mS)
Y fs
(mA)
= 8 V.
Fig.3 Transfer characteristics; typical values.
= 8 V.
I D
40
30
20
10
50
40
30
20
10
0
−0.6
0
0
Forward transfer admittance as a function
of drain current; typical values.
V G2-S = 0 V
−0.4
5
−0.2
10
0.5 V
0
15
0.2
V G1-S (V)
V G2-S = 4 V
4 V
1 V
20
0.4
I D (mA)
MRC281
MRC280
0.5 V
1.5 V
1.5 V
0 V
3 V
2 V
1 V
3 V
2 V
0.6
25
5
handbook, halfpage
V
T
j
G2-S
Fig.6
= 25 C.
(mA)
(mS)
Y fs
I D
Fig.4 Output characteristics; typical values.
= 4 V.
60
40
20
30
20
10
0
0
40
0
Forward transfer admittance as a function
of junction temperature; typical values.
0
4
40
8
80
Preliminary specification
V G1-S = 0.3 V
12
120
BF908WR
0.2 V
0.1 V
0 V
V DS (V)
−0.1 V
−0.2 V
−0.3 V
T
j
MRC276
MRC282
( C)
o
160
16