BF908WR NXP Semiconductors, BF908WR Datasheet - Page 2

• Manufacturer Part Number: BF908WR
• Description: Depletion type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
 High forward transfer admittance
 Short channel transistor with high forward transfer
 Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
 VHF and UHF applications with 12 V supply voltage,
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT343R package. The transistor is
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
QUICK REFERENCE DATA
1995 Apr 25
V
I
P
T
y
C
C
F
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
D
admittance to input capacitance ratio
such as television tuners and professional
communications equipment.
j
DS
tot
N-channel dual-gate MOS-FET
ig1-s
rs
SYMBOL
fs

drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
CAUTION
PARAMETER
f = 1 MHz
f = 800 MHz
2
PINNING
CONDITIONS
Marking code: MD.
PIN
Fig.1 Simplified outline (SOT343R) and symbol.
1
2
3
4
Top view
3
2
SYMBOL
1
s, b
g
g
d
4
2
1




36
2.4
20

MIN.
source
drain
gate 2
gate 1
MAM198
43
30




3.1
1.5
TYP.
Preliminary specification
DESCRIPTION
g 2
g 1
12
40
300
150
50
4
45
2.5
BF908WR
MAX.
s,b
d
V
mA
mW
C
mS
pF
fF
dB
UNIT