BF904AWR NXP Semiconductors, BF904AWR Datasheet - Page 7

• Manufacturer Part Number: BF904AWR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
handbook, halfpage
handbook, halfpage
N-channel dual gate MOS-FETs
V
R
Fig.15 Drain current as a function of gate 2 voltage;
V
R
Fig.13 Drain current as a function of gate 1 supply
(mA)
DS
G1
(mA)
DS
G1
I D
I D
= 5 V; T
= 120 k (connected to V
= 5 V; V
= 120 k (connected to V
12
12
8
4
0
8
4
0
0
0
typical values.
voltage (= V
j
G2-S
= 25 C.
= 4 V; T
1
j
2
= 25 C.
GG
2
GG
); typical values.
GG
); see Fig.21.
); see Fig.21.
3
4
V
V
GG
G2 S
4
V
= 5 V
GG
4.5 V
4 V
3.5 V
3 V
MLD275
MLD276
(V)
(V)
Rev. 04 - 13 November 2007
6
5
handbook, halfpage
handbook, halfpage
V
R
V
R
G2-S
( A)
DS
G1
I G1
G1
(mA)
I D
Fig.16 Gate 1 current as a function of gate 2
connected to V
= 5 V; T
= 120 k (connected to V
BF904A; BF904AR; BF904AWR
40
30
20
10
Fig.14 Drain current as a function of gate 1
20
15
10
= 4 V; T
0
5
0
0
0
j
= 25 C.
j
voltage; typical values.
= 25 C.
(= V
typical values.
GG
GG
2
; see Fig.21.
) and drain supply voltage;
R
2
G1
GG
= 47 k
); see Fig.21.
4
V
GG
68 k
4
Product specification
V
= V
V
GG
6
G2 S
DS
= 5 V
100 k
120 k
150 k
180 k
220 k
4.5 V
4 V
3.5 V
3 V
(V)
MLB945
MLD274
82 k
(V)
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8