BF1207 NXP Semiconductors, BF1207 Datasheet - Page 15

• Manufacturer Part Number: BF1207
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1207
Product data sheet
Fig 22. Amplifier B: unwanted voltage for 1 %
Fig 24. Amplifier B: drain current as a function of gain reduction; typical values
(dBμV)
V
unw
120
110
100
90
80
0
V
R
f
cross-modulation as a function of gain
reduction; typical values
V
unw
DS(B)
G1(B)
DS(B)
= 60 MHz; T
= 5 V; V
= 150 k (connected to V
= 5 V; V
20
GG
GG
amb
= 5 V; V
= 5 V; V
= 25 C; see
DS(A)
DS(A)
(mA)
40
gain reduction (dB)
I
D
= V
= V
20
16
12
GG
8
4
0
Figure
G1-S(A)
G1-S(A)
0
); f
All information provided in this document is subject to legal disclaimers.
001aac900
w
= 50 MHz;
30.
= 0 V;
= 0 V; R
Rev. 2 — 7 September 2011
60
20
G1(B)
= 150 k (connected to V
Fig 23. Amplifier B: typical gain reduction as a
reduction
gain
(dB)
40
gain reduction (dB)
10
20
30
40
50
0
0
V
R
T
function of AGC voltage; typical values
amb
DS(B)
G1(B)
001aac902
= 25 C; see
= 5 V; V
= 150 k (connected to V
60
GG
1
Dual N-channel dual gate MOSFET
); f = 50 MHz; T
GG
= 5 V; V
Figure
2
30.
DS(A)
amb
= V
GG
= 25 C; see
3
G1-S(A)
© NXP B.V. 2011. All rights reserved.
); f = 50 MHz;
V
001aac901
AGC
BF1207
(V)
= 0 V;
4
Figure
15 of 23
30.