BF1207 NXP Semiconductors, BF1207 Datasheet - Page 10

• Manufacturer Part Number: BF1207
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1207
Product data sheet
Fig 12. Amplifier A: input admittance as a function of
Fig 14. Amplifier A: reverse transfer admittance and
b
(mS)
is
(μS)
|y
10
10
, g
rs
10
10
10
10
|
10
is
−1
−2
1
1
2
3
2
10
10
V
I
frequency; typical values
V
I
phase as a function of frequency: typical
values
D(A)
D(A)
DS(A)
DS(A)
= 18 mA.
= 18 mA.
= 5 V; V
= 5 V; V
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
|y
b
g
ϕ
is
is
rs
rs
DS(B)
DS(B)
|
f (MHz)
f (MHz)
= V
= V
All information provided in this document is subject to legal disclaimers.
G1-S(B)
G1-S(B)
001aac890
001aac892
= 0 V;
= 0 V;
Rev. 2 — 7 September 2011
10
10
3
3
−10
−10
−10
−1
(deg)
ϕ
rs
3
2
Fig 13. Amplifier A: forward transfer admittance and
Fig 15. Amplifier A: output admittance as a function of
b
os
(mS)
(mS)
|y
10
10
, g
fs
10
|
10
10
−1
−2
os
1
1
2
10
10
V
I
phase as a function of frequency; typical
values
V
I
frequency; typical values
D(A)
D(A)
DS(A)
DS(A)
= 18 mA.
= 18 mA.
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOSFET
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
|y
ϕ
fs
fs
b
g
|
os
os
DS(B)
DS(B)
f (MHz)
f (MHz)
= V
= V
© NXP B.V. 2011. All rights reserved.
G1-S(B)
G1-S(B)
001aac891
001aac893
BF1207
= 0 V;
= 0 V;
10
10
3
3
−10
−10
−1
(deg)
ϕ
10 of 23
2
fs