BF1107 NXP Semiconductors, BF1107 Datasheet - Page 3

• Manufacturer Part Number: BF1107
• Description: Depletion type N-channel Field-Effect Transistor in a SOT23 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
7. Static characteristics
Table 7.
T
8. Dynamic characteristics
Table 8.
Common gate; T
BF1107_4
Product data sheet
Symbol
V
V
I
I
Symbol
L
ISL
R
C
C
DSX
GSS
j
ins(on)
(BR)GSS
GS(p)
DSon
ig
og
= 25 C.
off
Static characteristics
Dynamic characteristics
Parameter
on-state insertion loss
off-state isolation
drain-source on-state
resistance
input capacitance at gate
output capacitance at gate
Parameter
gate-source breakdown voltage
gate-source pinch-off voltage
drain cut-off current
gate leakage current
amb
= 25 C.
Table 6.
[1]
Symbol
R
th(j-sp)
Soldering point of the gate lead.
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
V
V
V
f = 1 MHz
f = 1 MHz
SG
SG
GS
R
R
R
R
V
V
V
V
SG
SG
SG
SG
Rev. 04 — 9 January 2007
S
S
S
S
Conditions
V
V
V
V
= V
= V
= 0 V; I
= R
= R
= R
= R
DS
DS
GS
GS
= V
= V
= V
= V
DG
DG
= 0 V; I
= 1 V; I
= 5 V; V
= 5 V; V
L
L
L
L
DG
DG
DG
DG
= 50
= 75
= 50
= 75
= 0 V; f = 50 MHz to 860 MHz
= 5 V; f = 50 MHz to 860 MHz
D
= 5 V
= 0 V
= 5 V
= 0 V
= 1 mA
GS
D
= 20 A
DS
DS
= 0.1 mA
= 2 V
= 0 V
Conditions
N-channel single gate MOSFET
Min
-
-
30
30
-
-
-
-
-
Min
7
-
-
-
[1]
Typ
260
Typ
-
-
-
-
12
0.9
1.5
0.9
1.5
Typ
-
-
-
© NXP B.V. 2007. All rights reserved.
3
BF1107
Max
2.5
3.5
-
-
20
-
2
-
2
Max
-
10
100
4.5
Unit
K/W
Unit
dB
dB
dB
dB
pF
pF
pF
pF
Unit
V
V
nA
A
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