BF1105WR NXP Semiconductors, BF1105WR Datasheet - Page 5

• Manufacturer Part Number: BF1105WR
• Description: Enhancement type N-channel Field-Effect Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
1997 Dec 02
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
T
V
T
G2-S
j
j
DS
Fig.7
= 25 C.
(mA)
(mS)
= 25 C.
I D
y fs
= 5 V.
Fig.5 Output characteristics; typical values.
25
20
15
10
40
30
20
10
= 4 V.
5
0
0
0
0
Forward transfer admittance as a function
of drain current; typical values.
2
10
4
2 V
20
V G2-S = 4 V
2.5 V
6
V G1 = 1.7 V
I D (mA)
V DS (V)
3.5 V
3 V
MGM246
MGM244
1.5 V
1.2 V
1 V
1.6 V
1.4 V
1.3 V
1.1 V
30
8
5
handbook, halfpage
handbook, halfpage
V
T
(1) V
(2) V
(3) V
DS
j
(mA)
(mA)
= 25 C.
I D
I D
Fig.6 Transfer characteristics; typical values.
Fig.8
= 5 V.
40
30
20
10
16
12
DS
DS
DS
0
8
4
0
BF1105; BF1105R; BF1105WR
0
0
= 5 V.
= 4.5 V.
= 4 V.
Drain current as a function of gate 2
voltage; typical values.
0.5
1
(4) V
(5) V
(1) (2)
1
2
DS
DS
(4) (5)
= 3.5 V.
= 3 V.
(3)
V G2-S = 4 V
1.5
3
Product specification
2
4
V G2-S (V)
1 V
3.5 V
3 V
2.5 V
2 V
1.5 V
V G1 (V)
MGM245
MGM247
2.5
5