BF1105WR NXP Semiconductors, BF1105WR Datasheet
BF1105WR
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BF1105WR Summary of contents
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... DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 DISCRETE SEMICONDUCTORS 1997 Dec 02 ...
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... Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL ...
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... Fig.4 Power derating curve. 1997 Dec 02 CONDITIONS 80 C; note 1; see Fig.4 T amb MGM243 120 160 T amb (°C) 3 Product specification BF1105; BF1105R; BF1105WR MIN. MAX. 7 30 10 10 200 65 +150 +150 UNIT ...
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... L opt input level for AGC MHz MHz; see Fig.18 w unw input level for AGC MHz MHz; see Fig.18 w unw 4 BF1105; BF1105R; BF1105WR CONDITIONS VALUE note 1 MIN. TYP A A A ...
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... MGM246 handbook, halfpage V G2 (mA (mA) (1) V ( BF1105; BF1105R; BF1105WR G2 0 C. Fig.6 Transfer characteristics; typical values (1) (2) (3) 8 (4) ( ...
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... Fig.11 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values (see Fig.18). 1997 Dec 02 fMGM248 handbook, halfpage (V) MGM250 40 60 gain reduction (dB MHz BF1105; BF1105R; BF1105WR (mA −8 −6 − G2-S j Fig.10 Drain current as a function of gate 1 current ...
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... mA Product specification BF1105; BF1105R; BF1105WR 3 ϕ (MHz G2 C. amb a function of frequency; typical values −1 − ...
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... V tun input Fig.16 Gain test circuit. V AGC kΩ BF1105 BF1105R L1 G1 BF1105WR 0.5 to 3.5 pF Fig.17 Gain test circuit. 8 BF1105; BF1105R; BF1105WR μ output 50 Ω BB405 330 kΩ tun output MGM255 ...
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... G2 min (dB) (ratio) 1.5 0.674 9 Product specification BF1105; BF1105R; BF1105WR μ Ω MGM257 S 12 ANGLE MAGNITUDE (ratio) (deg) (ratio) 0.000 86.9 0.985 0.002 86.1 0.983 0.003 82 ...
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... IEC SOT143B 1997 Dec scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC JEITA 10 Product specification BF1105; BF1105R; BF1105WR detail 2.5 0.45 0.55 0.2 0.1 0.1 2.1 0.15 0.45 EUROPEAN PROJECTION SOT143B ISSUE DATE 04-11-16 06-03-16 ...
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... Dec scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC JEITA SC-61AA 11 Product specification BF1105; BF1105R; BF1105WR detail 2.5 0.55 0.45 0.2 0.1 0.1 2.1 0.25 0.25 EUROPEAN PROJECTION SOT143R ISSUE DATE 04-11-16 06-03-16 ...
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... OUTLINE VERSION IEC SOT343R 1997 Dec scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES JEDEC EIAJ 12 BF1105; BF1105R; BF1105WR detail 2.2 0.45 0.23 0.2 0.2 2.0 0.15 0.13 EUROPEAN PROJECTION Product specification SOT343R 0.1 ISSUE DATE ...
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... Terms and conditions of commercial sale of NXP Semiconductors. 1997 Dec 02 BF1105; BF1105R; BF1105WR (2) This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... Dec 02 BF1105; BF1105R; BF1105WR Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...