BLS6G2731S-130 NXP Semiconductors, BLS6G2731S-130 Datasheet - Page 2

• Manufacturer Part Number: BLS6G2731S-130
• Description: 130 W LDMOS power transistor intended for radar applications in the 2
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLS6G2731S-130
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLS6G2731S-130 -
Symbol
V
V
I
T
T
Symbol Parameter
Z
D
stg
j
th(j-mb)
DS
GS
Connected to flange.
transient thermal impedance from junction
to mounting base
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
Rev. 2 — 18 November 2010
Description
ceramic earless flanged cavity package; 2 leads
[1]
LDMOS S-band radar power transistor
Simplified outline
Conditions
T
case
BLS6G2731S-130
t
t
t
t
p
p
p
p
= 85 °C; P
= 100 μs; δ = 10 %
= 200 μs; δ = 10 %
= 300 μs; δ = 10 %
= 100 μs; δ = 20 %
1
2
3
L
Min
-
−0.5
-
−65
-
= 130 W
Graphic symbol
© NXP B.V. 2010. All rights reserved.
Max
60
+13
33
+150
200
2
sym112
Typ
0.23
0.28
0.32
0.33
Version
SOT922-1
1
3
Unit
V
V
A
°C
°C
2 of 12
Unit
K/W
K/W
K/W
K/W