BLM6G22-30 NXP Semiconductors, BLM6G22-30 Datasheet - Page 7

30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz

BLM6G22-30

Manufacturer Part Number
BLM6G22-30
Description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
9. Test information
BLM6G22-30_BLM6G22-30G
Product data sheet
Fig 10. Component layout for 2110 MHz to 2170 MHz circuit for 2-carrier W-CDMA
Striplines are on a double copper-clad Rogers 4350B Printed-Circuit Board (PCB) with ε
See
C1
Table 8
R1
C2
for a list of components.
Table 8.
For test circuit see
[1]
Component
C1, C13
C2, C4, C8, C11, C12 multilayer ceramic chip capacitor 4.7 μF; 50 V
C3, C15
C5, C9, C10, C14
C6, C7
R1
R2
C4
American Technical Ceramics (ATC) type 100A or capacitor of same quality.
C3
R2
C8
C6
List of components
All information provided in this document is subject to legal disclaimers.
Figure
C5
Description
multilayer ceramic chip capacitor 0.3 pF
electrolytic capacitor
multilayer ceramic chip capacitor 10 pF
multilayer ceramic chip capacitor 100 nF
SMD resistor 0805
SMD resistor 0805
10.
Rev. 4 — 7 March 2011
C7
BLM6G22-30; BLM6G22-30G
C10
C9
W-CDMA 2100 MHz to 2200 MHz power MMIC
C11
C12
Value
220 μF; 35 V
1 kΩ
3.9 kΩ
r
= 3.5; thickness = 0.76 mm.
C15
C13
[1]
[1]
© NXP B.V. 2011. All rights reserved.
Remarks
C14
001aah629
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