BLL1214-250 NXP Semiconductors, BLL1214-250 Datasheet - Page 4

• Manufacturer Part Number: BLL1214-250
• Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Aug 29
handbook, halfpage
handbook, halfpage
L-band radar LDMOS transistor
(1) f = 1.2 GHz.
t
Fig.2
(1) f = 1.2 GHz.
t
Fig.4
p
p
= 1 ms; = 10%.
= 1 ms; = 10%.
(dB)
(W)
300
200
100
P L
G p
16
12
0
8
4
0
0
0
(2)
Load power as function of input power;
typical values.
Power gain as function of load power;
typical values.
(3)
(3)
(1)
(1)
(2) f = 1.3 GHz.
(2) f = 1.3 GHz.
4
100
(2)
8
(3) f = 1.4 GHz.
(3) f = 1.4 GHz.
200
12
P L (W)
P i (W)
MLD858
MLD860
300
16
4
handbook, halfpage
handbook, halfpage
(1) f = 1.2 GHz.
t
Fig.3
(1) f = 1.2 GHz.
t
Fig.5
p
p
= 100 s; = 10%.
= 100 s; = 10%.
(dB)
(W)
300
200
100
P L
G p
16
12
0
8
4
0
0
0
(2)
Load power as function of input power;
typical values.
Power gain as function of load power;
typical values.
(3)
(3)
(1)
(1)
(2) f = 1.3 GHz.
(2) f = 1.3 GHz.
4
(2)
100
8
(3) f = 1.4 GHz.
(3) f = 1.4 GHz.
200
BLL1214-250
Product specification
12
P L (W)
P i (W)
MLD861
MLD859
300
16