BLF7G27LS-75P NXP Semiconductors, BLF7G27LS-75P Datasheet - Page 7
![75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz](/photos/41/53/415359/sot1121b_3d_sml.gif)
BLF7G27LS-75P
Manufacturer Part Number
BLF7G27LS-75P
Description
75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G27L-75P.pdf
(13 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF7G27LS-75P
Manufacturer:
NXP
Quantity:
5 000
NXP Semiconductors
BLF7G27L-75P_BLF7G27LS-75P
Product data sheet
Fig 13. Single carrier W-CDMA peak-to-average power
PAR
8
7
6
5
4
3
0
V
ratio as a function of load power;
typical values
DS
= 28 V; I
10
Dq
= 650 mA; f = 2300 MHz.
20
30
All information provided in this document is subject to legal disclaimers.
001aam260
P
L
(W)
BLF7G27L-75P; BLF7G27LS-75P
40
Rev. 2 — 14 July 2010
Fig 14. Single carrier W-CDMA peak-to-average power
PAR
8
7
6
5
4
3
0
V
ratio as a function of load power;
typical values
DS
= 28 V; I
10
Dq
= 650 mA; f = 2400 MHz.
20
Power LDMOS transistor
30
© NXP B.V. 2010. All rights reserved.
001aam261
P
L
(W)
40
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