BLF7G27LS-75P NXP Semiconductors, BLF7G27LS-75P Datasheet - Page 4

• Manufacturer Part Number: BLF7G27LS-75P
• Description: 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-75P_BLF7G27LS-75P
Product data sheet
Fig 1.
Fig 3.
(dB)
(dB)
G
G
p
p
19
18
17
16
15
14
13
12
18
17
16
15
0
V
One-tone CW power gain and drain efficiency
as function of load power; typical values
0
V
Single carrier IS-95 power gain and drain
efficiency as function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
G
η
G
η
D
D
p
p
20
10
7.2 One-tone CW
7.3 Single carrier IS-95
Dq
Dq
= 650 mA; f = 2300 MHz.
= 650 mA; f = 2300 MHz.
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
40
20
60
30
80
40
All information provided in this document is subject to legal disclaimers.
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001aam250
P
P
L
L
BLF7G27L-75P; BLF7G27LS-75P
(W)
(W)
100
50
Rev. 2 — 14 July 2010
70
60
50
40
30
20
10
0
60
40
20
0
(%)
(%)
η
η
D
D
Fig 2.
Fig 4.
(dB)
(dB)
G
G
p
p
19
18
17
16
15
14
13
12
18
17
16
15
0
0
V
One-tone CW power gain and drain efficiency
as function of load power; typical values
V
Single carrier IS-95 power gain and drain
efficiency as function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
G
η
G
η
D
D
p
p
20
10
Dq
Dq
= 650 mA; f = 2400 MHz.
= 650 mA; f = 2400 MHz.
40
20
Power LDMOS transistor
60
30
© NXP B.V. 2010. All rights reserved.
80
40
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001aam251
P
P
L
L
(W)
(W)
100
50
70
60
50
40
30
20
10
0
60
40
20
0
(%)
(%)
η
η
D
D
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