BLF7G27LS-140 NXP Semiconductors, BLF7G27LS-140 Datasheet - Page 7

• Manufacturer Part Number: BLF7G27LS-140
• Description: 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-140_7G27LS-140
Product data sheet
Fig 9.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
18
17
16
15
14
13
0
V
Single carrier W-CDMA power gain as a
function of average output power;
typical values
DS
(1)
(2)
(3)
= 28 V; I
7.4 Single carrier W-CDMA
20
Dq
= 1300 mA.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
40
60
P
All information provided in this document is subject to legal disclaimers.
L(AV)
001aan517
(W)
BLF7G27L-140; BLF7G27LS-140
80
Rev. 3 — 22 July 2011
Fig 10. Single carrier W-CDMA drain efficiency as a
(%)
η
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
35
30
25
20
15
10
5
0
0
V
function of average output power;
typical values
DS
= 28 V; I
20
Dq
= 1300 mA.
40
Power LDMOS transistor
(1)
(2)
(3)
60
© NXP B.V. 2011. All rights reserved.
P
L(AV)
001aan518
(W)
80
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