BLF7G27LS-140 NXP Semiconductors, BLF7G27LS-140 Datasheet - Page 5

• Manufacturer Part Number: BLF7G27LS-140
• Description: 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-140_7G27LS-140
Product data sheet
Fig 3.
Fig 5.
ACPR
(dBc)
PAR
(dB)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−30
−40
−50
−60
−70
885k
11
10
9
8
7
6
0
V
Single carrier IS-95 ACPR at 885 kHz as a
function of average output power;
typical values
0
V
Single carrier IS-95 peak-to-average power
ratio as a function of average output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
10
10
Dq
Dq
(1)
(2)
(3)
(1)
(2)
(3)
= 1300 mA.
= 1300 mA.
20
20
30
30
40
40
All information provided in this document is subject to legal disclaimers.
P
P
001aan511
001aan513
L(AV)
L(AV)
BLF7G27L-140; BLF7G27LS-140
(W)
(W)
50
50
Rev. 3 — 22 July 2011
Fig 4.
Fig 6.
ACPR
(dBc)
P
(W)
L(M)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−50
−60
−70
−80
−90
240
160
1980k
80
0
0
0
V
Single carrier IS-95 ACPR at 1980 kHz as a
function of average output power;
typical values
V
Single carrier IS-95 peak output power as a
function of average output power;
typical values
DS
DS
= 28 V; I
= 28 V; I
10
10
Dq
Dq
= 1300 mA.
= 1300 mA.
20
20
(1)
(2)
(3)
Power LDMOS transistor
30
30
(1)
(2)
(3)
© NXP B.V. 2011. All rights reserved.
40
40
P
P
001aan512
001aan514
L(AV)
L(AV)
(W)
(W)
50
50
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