BLF7G27L-90P NXP Semiconductors, BLF7G27L-90P Datasheet - Page 7

• Manufacturer Part Number: BLF7G27L-90P
• Description: 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-90P_BLF7G27LS-90P
Product data sheet
Fig 9.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
20
19
18
17
16
5
V
Single carrier W-CDMA power gain as a
function of output power; typical values
DS
= 28 V; I
(1)
(2)
(3)
15
7.4 Single carrier W-CDMA
Dq
= 720 mA.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
25
35
45
All information provided in this document is subject to legal disclaimers.
aaa-000976
P
L
BLF7G27L-90P; BLF7G27LS-90P
(W)
Rev. 2 — 10 November 2011
55
Fig 10. Single carrier W-CDMA drain efficiency as a
(%)
η
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
50
40
30
20
5
V
function of output power; typical values
DS
= 28 V; I
15
Dq
= 720 mA.
25
Power LDMOS transistor
35
© NXP B.V. 2011. All rights reserved.
45
aaa-000977
P
L
(W)
(1)
(2)
(3)
55
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