BLF7G27L-90P NXP Semiconductors, BLF7G27L-90P Datasheet - Page 6

• Manufacturer Part Number: BLF7G27L-90P
• Description: 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G27L-90P_BLF7G27LS-90P
Product data sheet
Fig 7.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
20
19
18
17
16
15
10
V
Pulsed CW power gain as a function of output
power; typical values
DS
= 28 V; I
30
7.3 Pulsed CW
Dq
= 720 mA.
50
70
90
All information provided in this document is subject to legal disclaimers.
aaa-000974
(3)
(1)
(2)
P
L
BLF7G27L-90P; BLF7G27LS-90P
(W)
Rev. 2 — 10 November 2011
110
Fig 8.
(%)
η
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
D
60
50
40
30
20
10
V
Pulsed CW drain efficiency as a function of
output power; typical values
DS
= 28 V; I
30
Dq
(1)
(2)
(3)
= 720 mA.
50
Power LDMOS transistor
70
© NXP B.V. 2011. All rights reserved.
90
aaa-000975
P
L
(W)
110
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