BLF7G24L-160P NXP Semiconductors, BLF7G24L-160P Datasheet - Page 5
![160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz](/photos/41/53/415346/sot539a_3d_sml.gif)
BLF7G24L-160P
Manufacturer Part Number
BLF7G24L-160P
Description
160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G24L-160P.pdf
(14 pages)
NXP Semiconductors
BLF7G24L-160P_7G24LS-160P
Objective data sheet
Fig 5.
G%
*
S
S S
(1) G
(2) G
(3) G
(4)
(5)
(6)
V
Power gain and drain efficiency as function of
output power; typical values
DS
D
D
D
p
p
p
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
= 28 V; V
7.3.2 IS-95
GS1
= 24 V; I
Fig 4.
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
Dq1
V
Input return loss as a function of output power; typical values
DS
= 1200 mA.
3
= 28 V; V
/
BLF7G24L-160P; BLF7G24LS-160P
G%P
All information provided in this document is subject to legal disclaimers.
DDD
5/
G%
GS1
LQ
= 24 V; I
Rev. 2 — 1 March 2012
'
Dq1
= 1200 mA; = 10 %; t
Fig 6.
G%
*
S
S S
(1) G
(2) G
(3) G
(4)
(5)
(6)
V
Power gain and drain efficiency as function of
output power; typical values
D
D
D
DS
p
p
p
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
= 28 V; V
3
p
/
= 0.10 ms.
GS1
G%P
DDD
= 24 V; I
Power LDMOS transistor
Dq1
= 1200 mA.
3
© NXP B.V. 2012. All rights reserved.
/
DDD
:
5 of 14
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