BLF7G24L-160P NXP Semiconductors, BLF7G24L-160P Datasheet - Page 4
BLF7G24L-160P
Manufacturer Part Number
BLF7G24L-160P
Description
160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G24L-160P.pdf
(14 pages)
NXP Semiconductors
BLF7G24L-160P_7G24LS-160P
Objective data sheet
Fig 2.
G%
*
S
S S
(1) G
(2) G
(3) G
(4)
(5)
(6)
V
t
Power gain and drain efficiency as function of
output power; typical values
p
DS
D
D
D
p
p
p
= 0.10 ms.
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
= 28 V; V
7.3.1 Pulsed CW
7.2 Impedance information
7.3 Graphs
GS1
Table 8.
Measured load-pull data. Typical values per section.
I
f
(MHz)
2300
2400
Dq
= 24 V; I
Fig 1.
= 600 mA; main transistor V
Dq1
Definition of transistor impedance
Typical impedance
= 1200 mA; = 10 %;
3
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BLF7G24L-160P; BLF7G24LS-160P
G%P
All information provided in this document is subject to legal disclaimers.
DDD
Z
()
2.5 j5.9
4.6 j7.2
S
Rev. 2 — 1 March 2012
'
DS
= 28 V. Z
Fig 3.
gate
G%
Z
*
S
S
S S
S
(1) G
(2) G
(3) G
(4)
(5)
(6)
and Z
V
t
Power gain and drain efficiency as function of
output power; typical values
p
D
D
D
DS
p
p
p
= 0.10 ms.
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
L
= 28 V; V
001aaf059
defined in
Z
drain
L
GS1
Figure
= 24 V; I
Z
()
3.1 j4.3
2.9 j4.2
L
Power LDMOS transistor
1.
Dq1
= 1200 mA; = 10 %;
3
© NXP B.V. 2012. All rights reserved.
/
DDD
:
4 of 14
'