BLF7G22LS-200 NXP Semiconductors, BLF7G22LS-200 Datasheet - Page 2

• Manufacturer Part Number: BLF7G22LS-200
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF7G22L-200_7G22LS-200
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
BLF7G22L-200 (SOT502A)
1
2
3
BLF7G22LS-200 (SOT502B)
1
2
3
Type number
BLF7G22L-200
BLF7G22LS-200
Symbol
V
T
Symbol Parameter
V
T
R
stg
j
DS
GS
th(j-c)
Connected to flange.
thermal resistance from junction to case T
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
BLF7G22L-200; BLF7G22LS-200
Rev. 4 — 22 July 2011
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
Conditions
V
case
DS
Simplified outline
= 28 V; I
= 80 C; P
1
2
1
2
Dq
= 1620 mA
L
3
Power LDMOS transistor
= 80 W (CW);
3
Graphic symbol
-
Min
-
0.5
65
© NXP B.V. 2011. All rights reserved.
2
2
Max
65
+13
+150
200
sym112
sym112
Typ Unit
0.26 K/W
Version
SOT502A
SOT502B
1
3
1
3
2 of 13
Unit
V
V
C
C