BLF7G22L-200 NXP Semiconductors, BLF7G22L-200 Datasheet - Page 4

• Manufacturer Part Number: BLF7G22L-200
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-200_7G22LS-200
Product data sheet
Fig 2.
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
p
19
18
17
16
0
V
Power gain as a function of average load
power; typical values
DS
= 28 V; I
7.2 Impedance information
7.3 1 Tone CW
Dq
80
= 1620 mA.
Table 8.
Measured load-pull data; I
[1]
f
(MHz)
2050
2110
2140
2170
2230
(1)
(2)
(3)
Fig 1.
Z
S
and Z
Definition of transistor impedance
160
Typical impedance
L
defined in
P
L(AV)
All information provided in this document is subject to legal disclaimers.
001aan064
(W)
BLF7G22L-200; BLF7G22LS-200
Figure
240
Dq
Rev. 4 — 22 July 2011
= 1620 mA; V
1.
Z
()
1.05  j4.04
1.18  j4.17
1.32  j4.68
1.58  j4.37
2.55  j5.14
S
[1]
Fig 3.
gate
Z
DS
(%)
η
S
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
D
60
50
40
30
20
10
= 28 V.
0
V
Drain efficiency as a function of average load
power; typical values
DS
= 28 V; I
001aaf059
Z
drain
L
Dq
80
= 1620 mA.
Z
()
2.04  j1.28
1.67  j1.52
1.67  j1.52
1.62  j1.63
1.51  j1.83
L
[1]
Power LDMOS transistor
160
P
L(AV)
© NXP B.V. 2011. All rights reserved.
001aan065
(W)
(1)
(2)
(3)
240
4 of 13