BLF7G22L-100P NXP Semiconductors, BLF7G22L-100P Datasheet - Page 11

• Manufacturer Part Number: BLF7G22L-100P
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 11.
BLF7G22L-100P_BLF7G22LS-100P
Product data sheet
Document ID
BLF7G22L-100P_BLF7G22LS-100P v.3 20120102
Modifications:
BLF7G22L-100P_BLF7G22LS-100P v.2 20111110
BLF7G22L-100P_BLF7G22LS-100P v.1 20110519
Revision history
Table 10.
Acronym
3GPP
CCDF
CW
DPCH
ESD
LDMOS
LDMOST
PAR
PDPCH
RF
VSWR
W-CDMA
Abbreviations
BLF7G22L-100P; BLF7G22LS-100P
Release date
All information provided in this document is subject to legal disclaimers.
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The status of this document has been changed to Product data sheet.
Figure 1 on page
Rev. 3 — 2 January 2012
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical Channel
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Transmission Power of Dedicated Physical Channel
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Data sheet status
Product data sheet
Preliminary data sheet -
Objective data sheet
4: figure has been changed.
Change notice
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Power LDMOS transistor
Supersedes
BLF7G22L-100P_BL
F7G22LS-100P v.2
BLF7G22L-100P_BL
F7G22LS-100P v.1
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© NXP B.V. 2012. All rights reserved.
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