BLF7G21L-160P NXP Semiconductors, BLF7G21L-160P Datasheet - Page 5

• Manufacturer Part Number: BLF7G21L-160P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G21L-160P_7G21LS-160P
Product data sheet
Fig 2.
(dB)
G
(1) f = 1930 MHz
(2) f = 1960 MHz
(3) f = 1990 MHz
p
22
18
14
10
28
V
Power gain and drain efficiency as function of
load power; typical values
DS
= 28 V; I
7.3 1-Carrier W-CDMA
Dq
36
= 1080 mA.
Fig 4.
(1)
(1) f = 1930 MHz
(2) f = 1960 MHz
(3) f = 1990 MHz
(2)
(3)
V
Peak-to-average ratio as a function of load power; typical values
44
DS
= 28 V; I
P
BLF7G21L-160P; BLF7G21LS-160P
L
All information provided in this document is subject to legal disclaimers.
(dBm)
001aan461
Dq
PAR
(dB)
= 1080 mA.
Rev. 2 — 13 October 2011
52
60
40
20
0
8
6
4
2
0
(%)
28
η
D
Fig 3.
ACPR
(dBc)
36
(1) f = 1930 MHz
(2) f = 1960 MHz
(3) f = 1990 MHz
−10
−30
−50
−70
5M
28
V
Adjacent channel power ratio (5 MHz) and
adjacent channel power ratio (10 MHz) as a
function of load power; typical values
DS
= 28 V; I
(1)
44
(1)
(2)
(2)
Dq
P
(3)
36
(3)
L
= 1080 mA.
(dBm)
001aan463
52
Power LDMOS transistor
44
P
© NXP B.V. 2011. All rights reserved.
L
(dBm)
001aan462
52
ACPR
−10
−30
−50
−70
(dBc)
5 of 15
10M