BLF7G21L-160P NXP Semiconductors, BLF7G21L-160P Datasheet
BLF7G21L-160P
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BLF7G21L-160P Summary of contents
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... BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 2 — 13 October 2011 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8 0.01 % probability on CCDF; ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G21L-160P (SOT1121A BLF7G21LS-160P (SOT1121B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G21L-160P BLF7G21LS-160P - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...
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... PDPCH 1080 mA Symbol Parameter PAR O BLF7G21L-160P_7G21LS-160P Product data sheet BLF7G21L-160P; BLF7G21LS-160P Thermal characteristics Parameter thermal resistance from junction to case Characteristics C; per section unless otherwise specified. drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current ...
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... NXP Semiconductors 7.1 Ruggedness in class-AB operation The BLF7G21L-160P and BLF7G21LS-160P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V 7 1930 MHz ( 1960 MHz ( 1990 MHz Fig 1. BLF7G21L-160P_7G21LS-160P Product data sheet BLF7G21L-160P; BLF7G21LS-160P = 28 V ...
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... MHz ( 1960 MHz ( 1990 MHz Fig 2. Power gain and drain efficiency as function of load power; typical values ( 1930 MHz ( 1960 MHz ( 1990 MHz Fig 4. BLF7G21L-160P_7G21LS-160P Product data sheet BLF7G21L-160P; BLF7G21LS-160P 001aan461 60 η ACPR D (%) (dBc ...
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... 1080 mA ( 1930 MHz ( 1960 MHz ( 1990 MHz Fig 5. Power gain and drain efficiency as function of load power; typical values BLF7G21L-160P_7G21LS-160P Product data sheet BLF7G21L-160P; BLF7G21LS-160P 001aan464 60 η ACPR D (%) (dBc) 40 (1) (2) ( (dBm) L Fig 6 ...
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... 1080 mA ( 1930 MHz ( 1960 MHz ( 1990 MHz Fig 7. Power gain and drain efficiency as function of load power; typical values BLF7G21L-160P_7G21LS-160P Product data sheet BLF7G21L-160P; BLF7G21LS-160P 001aan466 60 η ACPR D (%) (dBc) 40 (1) (2) ( ...
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... C6, C13, C14 C8 C15 R1, R2 [1] American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] TDK or capacitor of same quality. BLF7G21L-160P_7G21LS-160P Product data sheet BLF7G21L-160P; BLF7G21LS-160P NXP BLF7G20L(S)_160P Rev_02 Input Printed-Circuit Board (PCB): Taconic RF35; ...
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... Typical values valid for both section in parallel unless otherwise specified. f MHz 1750 1805 1840 1880 1930 1960 1990 2020 2050 Fig 10. Definition of transistor impedance BLF7G21L-160P_7G21LS-160P Product data sheet BLF7G21L-160P; BLF7G21LS-160P Typical impedance Z S 0.99 j4.09 1.12 j4.39 1.23 j4.58 1.31 j4.74 1.49 j5.01 1.61 j5.19 1.75 j5.36 1.91 j5.54 2.13 j5.75 gate ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121A Fig 11. Package outline SOT1121A BLF7G21L-160P_7G21LS-160P Product data sheet BLF7G21L-160P; BLF7G21LS-160P ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121B Fig 12. Package outline SOT1121B BLF7G21L-160P_7G21LS-160P Product data sheet BLF7G21L-160P; BLF7G21LS-160P ...
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... LDMOS LDMOST PAR PDPCH RF SMD VSWR W-CDMA 10. Revision history Table 12. Revision history Document ID BLF7G21L-160P_7G21LS-160P v.2 20111013 Modifications: BLF7G21L-160P_7G21LS-160P v.1 20110401 BLF7G21L-160P_7G21LS-160P Product data sheet BLF7G21L-160P; BLF7G21LS-160P Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel ElectroStatic Discharge ...
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... BLF7G21L-160P_7G21LS-160P Product data sheet BLF7G21L-160P; BLF7G21LS-160P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G21L-160P_7G21LS-160P Product data sheet BLF7G21L-160P; BLF7G21LS-160P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 13 October 2011 Document identifier: BLF7G21L-160P_7G21LS-160P ...