BLF7G15LS-200 NXP Semiconductors, BLF7G15LS-200 Datasheet - Page 5

• Manufacturer Part Number: BLF7G15LS-200
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G15LS-200
Product data sheet
Fig 3.
Fig 5.
Gain
Gain
(dB)
(dB)
(1) gain
(2) efficiency
(1) gain
(2) efficiency
22
16
10
21
20
19
18
17
4
0
V
tone spacing 0.1 MHz.
Two-tone CW power gain and drain efficiency
as function of average load power;
typical values
0
V
carrier spacing 5 MHz.
efficiency as function of load power;
typical values
2-carrier W-CDMA power gain and drain
DS
DS
= 28 V; I
= 28 V; I
(1)
(2)
Dq
Dq
50
50
= 1600 mA; f = 1511 MHz;
= 1600 mA; f = 1511 MHz;
(1)
(2)
100
100
P
L(AV)
P
All information provided in this document is subject to legal disclaimers.
L
014aab254
014aab256
(W)
(W)
150
150
Rev. 3 — 22 July 2011
50
40
30
20
10
60
40
20
0
(%)
(%)
η
η
Fig 4.
Fig 6.
ACPR
(dBc)
(dBc)
IMD
(1) IMD3
(2) IMD5
(3) IMD7
−20
−40
−60
−80
−15
−25
−35
−45
0
0
0
V
tone spacing 0.1 MHz.
Two-tone intermodulation distortion as a
function of average load power; typical values
V
carrier spacing 5 MHz.
2-carrier W-CDMA adjacent channel power
ratio as function of load power 5 MHz
frequency offset; typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
50
50
BLF7G15LS-200
= 1600 mA; f = 1511 MHz;
= 1600 mA; f = 1511 MHz;
Power LDMOS transistor
(1)
(2)
(3)
100
100
P
L(AV)
© NXP B.V. 2011. All rights reserved.
P
L
014aab255
014aab257
(W)
(W)
150
150
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