BLF7G15LS-200 NXP Semiconductors, BLF7G15LS-200 Datasheet - Page 2

• Manufacturer Part Number: BLF7G15LS-200
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
6. Characteristics
BLF7G15LS-200
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Table 6.
T
Pin
1
2
3
Type number
Symbol
V
I
T
Symbol
R
Symbol Parameter
V
V
I
BLF7G15LS-200
V
T
D
DSS
j
stg
j
DS
GS
(BR)DSS
GS(th)
th(j-c)
= 25
Connected to flange.

C unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
Rev. 3 — 22 July 2011
earless flanged LDMOST ceramic package; 2 leads
Conditions
Conditions
V
V
GS
DS
GS
= 10 V; I
= 0 V; I
= 0 V; V
[1]
Simplified outline
Conditions
T
V
D
DS
case
D
DS
= 2.7 mA
= 270 mA
= 28 V
= 28 V; I
BLF7G15LS-200
= 80 C; P
1
2
Dq
3
Power LDMOS transistor
= 1600 mA
L
Min
65
1.5
-
= 50 W;
Symbol
-
Min
-
0.5
-
65
© NXP B.V. 2011. All rights reserved.
Typ
67
1.9
-
2
Max
65
+13
56
+150
200
sym112
Max
-
2.3
4.2
Typ
0.30 K/W
Version
SOT502B
1
3
2 of 11
Unit
Unit
V
V
A
C
C
Unit
V
V
A