BLF6G20-180PN NXP Semiconductors, BLF6G20-180PN Datasheet - Page 4

• Manufacturer Part Number: BLF6G20-180PN
• Description: 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G20-180PN_3
Product data sheet
Fig 2.
(dB)
G
p
22
20
18
16
14
12
0
V
f
Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
2
DS
= 1880.1 MHz.
= 32 V; I
7.1 Ruggedness in class-AB operation
G
D
p
Dq
100
= 1600 mA; f
The BLF6G20-180PN is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Dq
Fig 1.
= 1600 mA; P
V
One-tone CW power gain and drain efficiency as function of average load power;
typical values
1
200
DS
= 1880 MHz;
= 32 V; I
P
L(PEP)
L
001aai018
= 180 W (CW); f = 1880 MHz.
(W)
Dq
(dB)
G
= 1600 mA; f = 1880 MHz.
300
Rev. 03 — 30 March 2009
p
20
18
16
14
50
40
30
20
10
0
(%)
0
D
G
D
p
40
Fig 3.
(dBc)
IMD
80
10
30
50
70
0
V
f
Two-tone intermodulation distortion as a
function of peak envelope load power; typical
values
2
DS
= 1880.1 MHz.
= 32 V; I
120
Dq
100
BLF6G20-180PN
160
P
= 1600 mA; f
001aai017
L(AV)
(W)
200
Power LDMOS transistor
60
40
20
0
(%)
1
200
D
= 1880 MHz;
DS
IMD3
IMD5
IMD7
P
= 28 V;
L(PEP)
© NXP B.V. 2009. All rights reserved.
001aai019
(W)
300
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