BLF6G20-180PN NXP Semiconductors, BLF6G20-180PN Datasheet - Page 2

• Manufacturer Part Number: BLF6G20-180PN
• Description: 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G20-180PN_3
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
Type number
BLF6G20-180PN -
Symbol
V
V
T
T
T
stg
case
j
DS
GS
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
1800 MHz to 2000 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
storage temperature
case temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
Package
Name
Rev. 03 — 30 March 2009
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Conditions
[1]
Simplified outline
BLF6G20-180PN
1
3
2
4
Power LDMOS transistor
5
Graphic symbol
Min
-
-
-
© NXP B.V. 2009. All rights reserved.
0.5
65
3
4
Max
65
+13
+150
150
225
Version
SOT539A
1
2
sym117
2 of 11
5
Unit
V
V
C
C
C