BLF6G20-180PN NXP Semiconductors, BLF6G20-180PN Datasheet - Page 3

• Manufacturer Part Number: BLF6G20-180PN
• Description: 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G20-180PN_3
Product data sheet
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit.
Table 8.
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
I
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
Symbol
G
RL
ACPR
Symbol Parameter
PAR
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
th(j-case)
DS(on)
p
= 25 C per section; unless otherwise specified.
in
= 1600 mA; T
O
output peak-to-average ratio
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Parameter
thermal resistance from junction to case
Thermal characteristics
Characteristics
Application information
Application information
case
DS
= 25 C; unless otherwise specified; in a class-AB production test circuit.
= 32 V; I
Rev. 03 — 30 March 2009
1
1
= 1802.5 MHz; f
= 1872.5 MHz; f
Dq
= 1600 mA; T
Conditions
P
at 0.01 % probability on CCDF
L(AV)
Conditions
V
V
V
V
V
V
V
V
I
D
2
2
GS
DS
DS
GS
GS
DS
GS
DS
GS
V
V
= 5 A
= 1807.5 MHz; f
= 1877.5 MHz; RF performance at V
DS
DS
= 115 W;
= 10 V; I
= 32 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V
= V
= 11 V; V
= V
case
= 28 V
= 60 V
Conditions
P
P
P
P
GS(th)
GS(th)
L(AV)
L(AV)
L(AV)
L(AV)
= 25 C; unless otherwise specified; in a
Conditions
T
D
case
D
D
D
= 50 W
= 50 W
= 50 W
= 50 W
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 144 mA
= 800 mA
= 7.2 A
= 0 V
BLF6G20-180PN
= 80 C; P
3
= 1872.5 MHz; f
Power LDMOS transistor
Min
65
1.575 1.9
1.725 2.1
-
-
-
-
-
-
L(AV)
Min
16.8
-
26
-
= 50 W
Min Typ Max Unit
4.1
Typ
-
-
-
25
-
10
0.1
© NXP B.V. 2009. All rights reserved.
Typ
18
29.5 -
4
10
35
= 1877.5 MHz;
4.3
DS
= 32 V;
Max
19.2
Max
-
2.3
2.45
3
5
-
300
-
0.165
6.5
33
Typ
0.45 K/W
-
3 of 11
Unit
dB
dB
%
dBc
Unit
dB
Unit
V
V
V
A
nA
S
A
A