BLF6G10LS-260PRN NXP Semiconductors, BLF6G10LS-260PRN Datasheet - Page 6

• Manufacturer Part Number: BLF6G10LS-260PRN
• Description: 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G10L-260PRN_LS-260PRN
Product data sheet
Fig 4.
(dB)
G
(1) % efficiency at 960 MHz
(2) % efficiency at 940 MHz
(3) % efficiency at 920 MHz
(4) dB gain at 940 MHz
(5) dB gain at 920 MHz
(6) dB gain at 960 MHz
24.5
22.5
20.5
18.5
a. Gain and efficiency versus P
p
0
IS95, PAR = 9.8 dB at 0.01% probability of the CCDF.
Typical IS95 (gain; efficiency; ACPR1, ACPR2 and PAR versus P
7.3.2 IS95
50
(1)
(2)
(3)
(4)
(5)
(6)
100
O
P
All information provided in this document is subject to legal disclaimers.
L
014aab124
(AV)
150
Rev. 1 — 12 August 2010
60
40
20
0
(%)
η
D
ACPR1, ACPR2
(dBc)
(1) 885 kHz ACPR1, dBc at 960 MHz
(2) 885 kHz ACPR1, dBc at 940 MHz
(3) 885 kHz ACPR1, dBc at 920 MHz
(4) PAR, dB at 940 MHz
(5) PAR, dB at 920 MHz
(6) PAR, dB at 960 MHz
(7) 1980 kHz ACPR2, dBc at 940 MHz
(8) 1980 kHz ACPR2, dBc 920 MHz
(9) 1980 kHz ACPR2, dBc at 960 MHz
b. ACPR1, ACPR2 and PAR versus P
−30
−40
−50
−60
−70
−80
BLF6G10L(S)-260PRN
0
O
)
40
(1)
(2)
(3)
(7)
(8)
(9)
80
Power LDMOS transistor
120
© NXP B.V. 2010. All rights reserved.
(4)
(5)
(6)
P
014aab127
L
(AV)
O
160
12
10
8
6
4
2
PAR
(dB)
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