BLF6G10LS-260PRN NXP Semiconductors, BLF6G10LS-260PRN Datasheet - Page 5

• Manufacturer Part Number: BLF6G10LS-260PRN
• Description: 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G10L-260PRN_LS-260PRN
Product data sheet
7.3.1 CW
7.3 Typical powersweep
Fig 2.
Fig 3.
(1) % efficiency at 960 MHz
(2) % efficiency at 940 MHz
(3) % efficiency at 920 MHz
(4) dB gain at 940 MHz
(5) dB gain at 920 MHz
(6) dB gain at 960 MHz
(1) dB return loss at 940 MHz
(2) dB return loss at 920 MHz
(3) dB return loss at 960 MHz
Typical continuous wave 1 (gain; efficiency versus P
Typical continuous wave 2 (return loss versus P
All information provided in this document is subject to legal disclaimers.
(dB)
G
RL
(dB)
p
Rev. 1 — 12 August 2010
in
23
22
21
20
19
18
17
16
24
20
16
12
8
0
0
50
(1)
(2)
(3)
100
100
(1)
(2)
(3)
150
BLF6G10L(S)-260PRN
200
(4)
(5)
(6)
200
250
300
P
L
(W)
P
O
014aab123
014aab126
300
L
)
(W)
O
)
400
350
Power LDMOS transistor
70
60
50
40
30
20
10
0
(%)
η
D
© NXP B.V. 2010. All rights reserved.
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