BLF6G10LS-160RN NXP Semiconductors, BLF6G10LS-160RN Datasheet - Page 8
![160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz](/photos/41/53/415338/sot502b_3d_sml.gif)
BLF6G10LS-160RN
Manufacturer Part Number
BLF6G10LS-160RN
Description
160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10LS-160RN.pdf
(11 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF6G10LS-160RN
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLF6G10LS-160RN
Manufacturer:
NXP
Quantity:
5 000
NXP Semiconductors
Fig 9.
BLF6G10-160RN_10LS-160RN_2
Product data sheet
Earless flanged LDMOST ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
Package outline SOT502B
VERSION
OUTLINE
SOT502B
0.186
0.135
4.72
3.43
A
12.83
12.57
0.505
0.495
b
H
0.006
0.003
0.15
0.08
c
U 2
L
A
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
0.374
0.366
9.50
9.30
JEDEC
E
U 1
D 1
D
b
0.375
0.364
9.53
9.25
REFERENCES
E 1
Rev. 02 — 21 January 2010
3
1
2
0.045
0.035
1.14
0.89
0
F
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
D
M
F
0.210
0.170
5.33
4.32
D
10 mm
L
M
0.067
0.057
1.70
1.45
Q
BLF6G10(LS)-160RN
20.70
20.45
0.815
0.805
U 1
0.390
0.380
9.91
9.65
U 2
E 1
PROJECTION
0.010
EUROPEAN
0.25
w 2
c
Q
Power LDMOS transistor
E
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
03-01-10
07-05-09
SOT502B
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