BLF6G10LS-160RN NXP Semiconductors, BLF6G10LS-160RN Datasheet - Page 4

• Manufacturer Part Number: BLF6G10LS-160RN
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G10-160RN_10LS-160RN_2
Product data sheet
Fig 2.
(dB)
G
p
24
22
20
18
0
V
f
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
2
DS
= 960.05 MHz.
= 32 V; I
40
7.2 One-tone CW
7.3 Two-tone CW
G
η
D
p
Dq
= 1200 mA; f
80
Fig 1.
120
V
One-tone CW power gain and drain efficiency as functions of load power;
typical values
1
DS
= 959.95 MHz;
= 32 V; I
160
P
001aah476
L(PEP)
Dq
(dB)
(W)
Rev. 02 — 21 January 2010
G
= 1200 mA; f = 960 MHz.
200
p
24
22
20
18
60
40
20
0
(%)
0
η
D
40
Fig 3.
(dBc)
IMD
−20
−40
−60
−80
80
0
0
V
f
Intermodulation distortion as a function of
peak envelope load power; typical values
2
DS
= 960.05 MHz.
BLF6G10(LS)-160RN
= 32 V; I
120
Dq
160
80
= 1200 mA; f
001aah475
η
G
P
D
p
L
(W)
200
Power LDMOS transistor
60
40
20
0
(%)
η
1
160
D
= 959.95 MHz;
P
L(PEP)
© NXP B.V. 2010. All rights reserved.
IMD3
IMD5
IMD7
001aah477
(W)
240
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