BLF6G10LS-135RN NXP Semiconductors, BLF6G10LS-135RN Datasheet - Page 6

• Manufacturer Part Number: BLF6G10LS-135RN
• Description: 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 8.
See
[1]
[2]
BLF6G10-135RN_10LS-135RN_2
Product data sheet
Component
C1, C3, C10, C14, C17 multilayer ceramic chip capacitor
C2, C4, C5
C6, C7
C8, C9, C12, C13
C11, C15
C16
C18, C19, C20
L1
Q1
R1, R2, R3
Fig 7.
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
Figure 6
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
See
The drawing is not to scale.
Component layout
List of components
and
Table 8
Figure
for list of components.
7.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
ferrite SMD bead
BLF6G10LS-135RN
SMD resistor
R1
C1
C3
800 -1000 MHz
C2
V1.0
IN
Rev. 02 — 21 January 2010
C4
C5
R2
Q1
Value
68 pF
8.2 pF
10 pF
100 nF
4.7 μF; 50 V
3.0 pF
220 μF; 63 V
9.1 Ω; 0.1 W
C6
C7
800 -1000 MHz
C8
OUT
V1.0
BLF6G10(LS)-135RN
C9
C12
[1]
[1]
[1]
[2]
[1]
C10 C11
C13
Remarks
solder vertically
solder vertically
solder vertically
Vishay or capacitor of same quality.
solder vertically
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
C14
C15
C18
C19
r
= 3.5 and thickness = 0.76 mm.
Power LDMOS transistor
L1
© NXP B.V. 2010. All rights reserved.
R3
C16
C20
C17
001aah870
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