BLF6G10LS-135RN NXP Semiconductors, BLF6G10LS-135RN Datasheet - Page 4

• Manufacturer Part Number: BLF6G10LS-135RN
• Description: 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G10-135RN_10LS-135RN_2
Product data sheet
Fig 2.
(dB)
G
p
23
22
21
20
19
0
V
Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
DS
G
η
D
p
= 28 V; I
25
Dq
= 950 mA; f
Fig 1.
50
1
V
One-tone CW power gain and drain efficiency as function of load power;
typical values
= 881 MHz (±100 kHz).
DS
= 28 V; I
75
P
L(PEP)
001aah865
Dq
(W)
(dB)
Rev. 02 — 21 January 2010
G
= 950 mA; f = 881 MHz.
100
p
24
23
22
21
20
19
60
45
30
15
0
(%)
0
η
D
G
η
D
p
Fig 3.
40
(dBc)
IMD
−20
−30
−40
−50
−60
0
V
Two-tone CW intermodulation distortion as a
function of peak envelope load power;
typical values
80
DS
BLF6G10(LS)-135RN
= 28 V; I
25
120
Dq
= 950 mA; f
P
001aah864
L
(W)
50
160
Power LDMOS transistor
75
60
45
30
15
0
1
(%)
η
= 881 MHz (±100 kHz).
D
75
P
© NXP B.V. 2010. All rights reserved.
L(PEP)
001aah866
IMD3
IMD5
IMD7
(W)
100
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