BLF6G10L-260PRN NXP Semiconductors, BLF6G10L-260PRN Datasheet - Page 7

• Manufacturer Part Number: BLF6G10L-260PRN
• Description: 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G10L-260PRN_LS-260PRN
Product data sheet
Fig 5.
(dB)
G
(1) % efficiency at 960 MHz
(2) % efficiency at 940 MHz
(3) % efficiency at 920 MHz
(4) dB gain at 940 MHz
(5) dB gain at 920 MHz
(6) dB gain at 960 MHz
24.5
22.5
20.5
18.5
a. Gain and efficiency versus P
p
0
3GPP, Test Model 1, 64 DPCH, PAR=7.5 dB at 0.01% probability per carrier. 5 MHz carrier spacing.
Typical 2C-WCDMA (gain; efficiency; ACPR1, ACPR2 and PAR versus P
7.3.3 2C-WCDMA (5 MHz spacing)
50
(1)
(2)
(3)
100
O
P
All information provided in this document is subject to legal disclaimers.
L
014aab122
(AV)
(4)
(5)
(6)
150
Rev. 1 — 12 August 2010
60
40
20
0
(%)
η
D
ACPR1, ACPR2
(dBc)
(1) 5 MHz ACPR1, dBc at 960 MHz
(2) 5 MHz ACPR1, dBc at 940 MHz
(3) 5 MHz ACPR1, dBc at 920 MHz
(4) PAR, dB at 920 MHz
(5) PAR, dB at 940 MHz
(6) PAR, dB at 960 MHz
(7) 10 MHz ACPR2, dBc at 940 MHz
(8) 10 MHz ACPR2, dBc 920 MHz
(9) 10 MHz ACPR2, dBc at 960 MHz
b. ACPR1, ACPR2 and PAR versus P
−20
−28
−36
−44
−52
−60
BLF6G10L(S)-260PRN
0
50
O
)
(7)
(8)
(9)
(1)
(2)
(3)
Power LDMOS transistor
100
(4)
(5)
(6)
P
© NXP B.V. 2010. All rights reserved.
L
014aab125
(AV)
O
150
10
9
8
7
6
5
PAR
(dB)
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