BLF6G10L-260PRN NXP Semiconductors, BLF6G10L-260PRN Datasheet - Page 10

• Manufacturer Part Number: BLF6G10L-260PRN
• Description: 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Package outline
Fig 7.
BLF6G10L-260PRN_LS-260PRN
Product data sheet
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
inches
UNIT
mm
OUTLINE
VERSION
SOT539A
Package outline SOT539A
H
0.185
0.165
4.7
4.2
A
U 2
A
11.81
11.56
0.465
0.455
A
L
b
0.007
0.004
0.18
0.10
c
31.55
30.94
1.242
1.218
IEC
D
31.52
30.96
1.241
1.219
D 1
3
1
13.72
0.540
e
All information provided in this document is subject to legal disclaimers.
JEDEC
0.374
0.366
9.50
9.30
E
U 1
H 1
D 1
D
q
e
REFERENCES
0.375
0.365
9.53
9.27
E 1
Rev. 1 — 12 August 2010
0.069
0.059
1.75
1.50
0
F
b
scale
17.12
16.10
0.674
0.634
EIAJ
2
4
H
5
25.53
25.27
1.005
0.995
10 mm
H 1
0.137
0.117
BLF6G10L(S)-260PRN
3.48
2.97
w 2
w 3
5
L
M
M
C
0.130
0.120
3.30
3.05
C
p
p
F
M
B
0.089
0.079
2.26
2.01
Q
w 1
M
35.56
1.400
A
q
PROJECTION
EUROPEAN
M
41.28
41.02
1.625
1.615
B
U 1
Power LDMOS transistor
M
10.29
10.03
0.405
0.395
E 1
U 2
c
© NXP B.V. 2010. All rights reserved.
0.010 0.020
0.25
Q
w 1
ISSUE DATE
00-03-03
10-02-02
0.51
w 2
SOT539A
E
0.010
0.25
w 3
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