BLF246B NXP Semiconductors, BLF246B Datasheet - Page 7

Dual silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap

BLF246B

Manufacturer Part Number
BLF246B
Description
Dual silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
2003 Aug 04
handbook, halfpage
VHF push-pull power MOS transistor
Class-B operation; V
Z
Fig.9
L
(dB)
G p
= 4.6
25
20
15
10
5
0
0
Power gain and efficiency as a function of
load power; typical values per section.
j5 ; f = 175 MHz.
20
DS
G p
= 28 V; I
D
DQ
40
= 2
50 mA;
60
P L (W)
MGR744
80
100
80
60
40
20
0
(%)
D
7
handbook, halfpage
Class-B operation; V
Z
Fig.10 Load power as a function of input power;
L
(W)
P L
= 4.6
100
80
60
40
20
0
0
typical values per section.
j5 ; f = 175 MHz.
0.5
DS
= 28 V; I
1.0
DQ
= 2
1.5
50 mA;
Product specification
2.0
BLF246B
P IN (W)
MGR745
2.5

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