BLF246B NXP Semiconductors, BLF246B Datasheet - Page 11
BLF246B
Manufacturer Part Number
BLF246B
Description
Dual silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap
Manufacturer
NXP Semiconductors
Datasheet
1.BLF246B.pdf
(14 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF246B
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
2003 Aug 04
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-B operation; V
R
Fig.13 Input impedance as a function of frequency
GS
( )
Z i
= 10 ; P
10
5
0
5
Fig.15 Definition of MOS impedance.
0
(series components); typical values per
section.
L
= 60 W (total device).
r i
Z i
100
DS
x i
= 28 V; I
DQ
200
= 2
Z L
50 mA;
MBA379
300
f (MHz)
MGR746
400
11
handbook, halfpage
handbook, halfpage
Class-B operation; V
R
Fig.14 Load impedance as a function of frequency
Class-B operation; V
R
Fig.16 Power gain as a function of frequency;
GS
GS
(dB)
G p
( )
Z L
= 10 ; P
= 10 ; P
15
10
25
20
15
10
5
0
5
0
0
0
(series components); typical values per
section.
typical values per section.
L
L
= 60 W (total device).
= 60 W (total device).
X L
R L
100
100
DS
DS
= 28 V; I
= 28 V; I
DQ
DQ
200
200
= 2
= 2
50 mA;
50 mA;
Product specification
300
300
f (MHz)
f (MHz)
BLF246B
MGR747
MGR748
400
400