BLF2425M6LS180P NXP Semiconductors, BLF2425M6LS180P Datasheet - Page 5

• Manufacturer Part Number: BLF2425M6LS180P
• Description: 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF2425M6L180P_25M6LS180P
Objective data sheet
7.3 Test circuit
Table 9.
For test circuit, see
[1]
[2]
[3]
Component
C1, C2, C3
C4, C5, C10, C11
C6, C12, C13
C7
C8, C9
C14
R1, R2
Fig 2.
American technical ceramics type 100A or capacitor of same quality.
American technical ceramics type 800B or capacitor of same quality.
American technical ceramics type 100B or capacitor of same quality.
Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with 
and thickness = 0.508 mm.
See
Component layout for test circuit
C1
List of components
C6
C4
Table 9
C5
R1
All information provided in this document is subject to legal disclaimers.
R2
Figure
for list of components.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
Rev. 1 — 7 February 2012
2.
C2
C3
BLF2425M6L(S)180P
Value
15 pF
220 nF; SMD 1206
4.7 F
6.8 pF
220 F, 63 V
6.2 ; SMD 1206
39 pF
C8
C9
Power LDMOS transistor
C10
C11
© NXP B.V. 2012. All rights reserved.
[1]
[2]
[3]
C13
C12
aaa-002274
C14
Remarks
C7
r
= 3.5
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