BLF2425M6LS180P NXP Semiconductors, BLF2425M6LS180P Datasheet - Page 3

• Manufacturer Part Number: BLF2425M6LS180P
• Description: 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF2425M6L180P_25M6LS180P
Objective data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Test signal: CW; f = 2450 MHz; V
a class-AB production test circuit.
The BLF2425M6L180P and BLF2425M6LS180P are capable of withstanding a load
mismatch corresponding to VSWR = <tbd> through all phases under the following
conditions: V
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
Symbol Parameter
G
RL

DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
th(j-case)
DS(on)
p
= 25
in

C per section; unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
power gain
input return loss
drain efficiency
Parameter
thermal resistance from junction to case
Thermal characteristics
DC characteristics
RF characteristics
DS
All information provided in this document is subject to legal disclaimers.
= 28 V; I
Rev. 1 — 7 February 2012
Dq
= 10 mA; P
DS
= 28 V; I
L
Conditions
V
V
V
V
V
V
V
V
I
D
Dq
= 180 W (CW); f = 2450 MHz.
GS
DS
GS
GS
DS
GS
DS
GS
V
V
= 5 A
Conditions
P
P
P
DS
DS
= 10 mA; T
L
L
L
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V
= V
= 11 V; V
= V
BLF2425M6L(S)180P
= 180 W
= 180 W
= 180 W
= 28 V
= 65 V
GS(th)
GS(th)
Conditions
T
D
case
D
D
= 1.44 mA
+ 3.75 V;
DS
+ 3.75 V;
= 144 mA
= 7.2 A
case
= 0 V
= 80 C; P
= 25

C unless otherwise specified in
Power LDMOS transistor
Min
65
1.4
-
-
-
-
-
-
L
= 180 W
Min Typ
10
-
50
Typ
-
1.9
-
-
25
-
<tbd> -
0.1
© NXP B.V. 2012. All rights reserved.
12
10
55
Max
-
2.4
3
5
-
300
-
Typ
0.38 K/W
Max Unit
-
8
-
3 of 11
Unit
dB
dB
%
Unit
V
V
A
A
A
nA
S
