BLA6G1011-200R NXP Semiconductors, BLA6G1011-200R Datasheet - Page 2

• Manufacturer Part Number: BLA6G1011-200R
• Description: 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLA6G1011-200R_L-200RG_LS-200RG
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLA6G1011-200R (SOT502A)
1
2
3
BLA6G1011L-200RG (SOT502D)
1
2
3
BLA6G1011LS-200RG (SOT502C)
1
2
3
Type number
BLA6G1011-200R
BLA6G1011L-200RG
BLA6G1011LS-200RG -
Symbol
V
V
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
Description
drain
gate
source
drain
gate
source
drain
gate
source
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 9 November 2011
Package
Name Description
-
-
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
eared flanged LDMOST ceramic package; 2
mounting holes; 2 leads
earless flanged LDMOST ceramic package; 2 leads
BLA6G1011(L)(S)-200R(G)
Conditions
[1]
[1]
[1]
Simplified outline
1
2
1
2
1
2
Power LDMOS transistor
3
3
3
Graphic symbol
Min
-
0.5
© NXP B.V. 2011. All rights reserved.
2
2
2
Max
65
+13
sym112
sym112
sym112
Version
SOT502A
SOT502D
SOT502C
1
3
1
3
1
3
2 of 13
Unit
V
V