PSMN9R5-30YLC NXP Semiconductors, PSMN9R5-30YLC Datasheet - Page 7

• Manufacturer Part Number: PSMN9R5-30YLC
• Description: Logic level enhancement mode N-channel MOSFET in LFPAK package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
PSMN9R5-30YLC
Product data sheet
Symbol
Q
Source-drain diode
V
t
Q
t
t
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
60
40
20
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
10
4.5
Parameter
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise time
reverse recovery fall time
1
3.5
N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK using NextPower technology
2
…continued
3
V
GS
All information provided in this document is subject to legal disclaimers.
4
003aag184
(V) =
V
DS
(V)
3.0
2.8
2.6
2.4
2.2
Conditions
V
T
I
see
I
V
V
dI
see
Rev. 2 — 1 September 2011
S
S
GS
j
GS
GS
S
5
= 25 °C
= 15 A; V
= 15 A; dI
/dt = -100 A/µs; V
Figure 17
Figure 18
= 0 V; V
= 0 V; V
= 0 V; I
GS
S
S
DS
DS
/dt = -100 A/µs;
= 15 A;
= 0 V; T
Fig 7.
= 15 V; f = 1 MHz;
= 15 V
R
(m Ω )
DSon
DS
40
30
20
10
j
0
= 15 V;
of gate-source voltage; typical values
= 25 °C;
Drain-source on-state resistance as a function
0
4
PSMN9R5-30YLC
Min
-
-
-
-
-
-
8
Typ
4.4
0.86
10
18
11
7
12
© NXP B.V. 2011. All rights reserved.
003aag185
V
GS
Max
-
1.1
-
-
-
-
(V)
16
Unit
nC
V
ns
nC
ns
ns
7 of 15