PSMN9R5-100XS NXP Semiconductors, PSMN9R5-100XS Datasheet - Page 7

• Manufacturer Part Number: PSMN9R5-100XS
• Description: Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 7.
PSMN9R5-100XS
Preliminary data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 6.
Fig 8.
SD
r
(A)
(S)
g
I
D
160
120
fs
160
120
80
40
80
40
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics; drain current as a
Forward transconductance as a function of
0
0
Characteristics
V
Parameter
source-drain voltage
reverse recovery time
recovered charge
GS
(V) = 10
40
1
6.0
…continued
80
2
120
3
N-channel 100V 9.6 mΩ standard level MOSFET in TO220F (SOT186A)
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003aag593
003aag595
V
I
D
DS
(A)
4.6
(V)
5.0
4.8
4.4
4.2
4
Conditions
I
see
I
V
S
S
160
GS
Rev. 2 — 20 October 2011
4
= 10 A; V
= 10 A; dI
Figure 18
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
Fig 7.
Fig 9.
= 50 V
R
(m Ω )
(A)
DSon
I
D
160
120
80
60
40
20
80
40
j
0
0
= 25 °C;
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics; drain current as a
4
0
8
PSMN9R5-100XS
2
T
Min
-
-
-
j
12
= 175 ° C
4
Typ
0.76
61.5
157
16
© NXP B.V. 2011. All rights reserved.
V
T
003aag594
GS
V
003aag596
j
= 25 ° C
GS
(V)
Max
1.2
-
-
(V)
20
6
Unit
V
ns
nC
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