PSMN9R5-100BS NXP Semiconductors, PSMN9R5-100BS Datasheet - Page 8

• Manufacturer Part Number: PSMN9R5-100BS
• Description: Standard level N-channel MOSFET in a D2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN9R5-100BS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
V
R
(mΩ)
(V)
GS
DSon
40
30
20
10
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
(V) = 4.5
V
25
25
DS
= 20 V
4.7
50
50
4.8
50 V
75
75
All information provided in this document is subject to legal disclaimers.
Q
I
003aae024
003aae026
G
D
(A)
(nC)
5.5
10
5
100
100
Rev. 2 — 2 March 2012
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
V
V
V
−2
GS(pl)
DS
GS(th)
GS
C
C
C
10
Q
iss
oss
rss
GS1
−1
PSMN9R5-100BS
I
Q
D
GS
Q
GS2
Q
1
G(tot)
Q
GD
10
© NXP B.V. 2012. All rights reserved.
V
003aaa508
003aae023
DS
(V)
10
2
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